BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

BAT68E6327 is a Schottky barrier diode from Infineon Technologies,designed for RF and high-frequency applications.

Key Features of BAT68E6327

1. Electrical Characteristics

   • Peak Reverse Voltage (Vr): 8V

   • Maximum Forward Current (If): 130mA

   • Low Forward Voltage Drop (Vf): 390mV (typ) at 5mA

   • Ultra-Low Capacitance: 1pF @ 0V, 1MHz

2. High-Frequency Performance

   • Optimized for RF and microwave circuits due to fast switching and low noise

   • Low series resistance (Rs): 10Ω @ 5mA, 10kHz

3. Package & Reliability

   • SOT-23-3 (SC-59, TO-236-3) surface-mount package

   • Wide temperature range: -55°C to +150°C

   • RoHS compliant & lead-free

Applications

The BAT68E6327 is widely used in:

• RF signal detection & mixing (e.g., VHF/UHF circuits)

• Voltage clamping & protection circuits

• High-speed data networks & wireless communication (e.g., base stations, satellite receivers)

• Low-power signal rectification in portable electronics

Technical Summary

• Package: SOT-23-3 (3-pin)

• Power Dissipation: 150mW max

• Equivalent Models: BAT68-07W, BAT68-08S (for alternate pinouts)

BAT68E6327 Schottky Barrier Diode

Schottky Barrier Diode Infineon

BAT68E6327 RF Schottky Diode

BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode Images